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a29001b/a290011b series 128k x 8 bit cmos 5.0 volt-only, preliminary boot sector flash memory preliminary (june, 2016, version 0.0) amic technology, corp. amic reserves the right to change products and specifications discussed herein without notice. document title 128k x 8 bit cmos 5.0 volt-onl y, boot sector flash memory revision history rev. no. history issue date remark 0.0 initial issue june 16, 2016 preliminary
a29001b/a290011b series 128k x 8 bit cmos 5.0 volt-only, preliminary boot sector flash memory preliminary (june, 2016, version 0.0) 1 amic technology, corp. features ? 5.0v 10% for read and write operations ? access time: - 55ns (max.) ? current: - 20ma typical active read current - 30ma typical program/erase current - 6 a typical cmos standby ? flexible sector architecture - 8 kbyte/ 4 kbytex2/ 16 kbyte/ 32 kbytex3 sectors - any combination of sectors can be erased - supports full chip erase - sector protection: a hardware method of protecting sectors to prevent any inadvertent program or erase operations within that sector ? top or bottom boot block configurations available ? embedded erase algorithms - embedded erase algorithm will automatically erase the entire chip or any combination of designated sectors and verify the erased sectors - embedded program algorithm automatically writes and verifies bytes at specified addresses ? minimum 100,000 program/erase cycles per sector ? 20-year data retention at 125oc - reliable operation for the life of the system ? compatible with jedec-standards - pinout and software compatible with single-power- supply flash memory standard - superior inadvertent write protection ? data polling and toggle bits - provides a software method of detecting completion of program or erase operations ? erase suspend/erase resume - suspends a sector erase operation to read data from, or program data to, a non-erasing sector, then resumes the erase operation ? hardware reset pin ( reset ) - hardware method to reset the device to reading array data (not available on a290011b) ? industrial operating temperature range: -40 c to +85 c for ? u ? package options - 32-pin p-dip, plcc or tsop - all pb-free (lead-free) pr oducts are rohs2.0 compliant general description the a29001b is a 5.0 volt-only flash memory organized as 131,072 bytes of 8 bits each. the a29001b offers the reset function, but it is not available on a290011b. the 128 kbytes of data are further divided into seven sectors for flexible sector erase capability. the 8 bits of data appear on i/o 0 - i/o 7 while the addresses are input on a0 to a16. the a29001b is offered in 32-pin plcc, pdip and tsop packages. this device is designed to be programmed in- system with the standard syst em 5.0 volt vcc supply. additional 12.0 volt vpp is not required for in-system write or erase operations. however, the a29001b can also be programmed in standard eprom programmers. the a29001b has the first toggle bit, i/o 6 , which indicates whether an embedded program or erase is in progress, or it is in the erase suspend. besides the i/o 6 toggle bit, the a29001b has a second toggle bit, i/o 2 , to indicate whether the addressed sector is being selected for erase. the a29001b also offers the ability to program in the erase suspend mode. the standard a29001b offers access time of 55ns allowing high-speed microprocessors to operate without wait states. to elim inate bus contention the device has separate chip enable ( ce ), write enable ( we ) and output enable ( oe ) controls. the device requires only a single 5.0 volt power supply for both read and write functions. internally generated and regulated voltages are provid ed for the program and erase operations. the a29001b is entirely software command set compatible with the jedec single-power-supply flash standard. commands are written to the command register using standard microprocessor write timings. register contents serve as input to an internal st ate-machine that controls the erase and programming circuitry. write cycles also internally latch addresses and data needed for the programming and erase operations. reading data out of the device is similar to reading from other flash or eprom devices. device programming occurs by writing the proper program command sequence. this initiates the embedded program algorithm - an internal algorit hm that automatically times the program pulse widths and verifies proper program margin. device erasure occurs by executing the proper erase command sequence. this initiates the embedded erase algorithm - an internal algor ithm that automatically preprograms the array (if it is not already programmed) before executing the erase oper ation. during erase, the device automatically times t he erase pulse widths and verifies proper erase margin. the host system can detect wh ether a program or erase operation is complete by reading the i/o 7 ( data polling) and i/o 6 (toggle) status bits. after a program or erase cycle has been completed, the device is ready to read array data or accept another command.
a29001b/a290011b series preliminary (june, 2016, version 0.0) 2 amic technology, corp. the sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. t he a29001b is fully erased when shipped from the factory. the hardware sector prot ection feature disables operations for both program and erase in any combination of the sectors of memory. this can be achieved via programming equipment. the erase suspend feature enabl es the user to put erase on hold for any period of time to read data from, or program data to, any other sector that is not selected for erasure. true background eras e can thus be achieved. power consumption is greatly reduced when the device is placed in the standby mode. the hardware reset pin terminates any operation in progress and resets the internal state machine to reading array data (this feature is not available on the a290011b). pin configurations ? dip ? plcc reset a16 a15 a12 a7 a6 a5 a4 a3 a2 a1 a0 i/o 0 i/o 1 i/o 2 i/o 3 vss i/o 4 i/o 5 i/o 6 i/o 7 ce a10 oe a9 a8 a13 we nc a14 vcc a11 a29001b/a290011b 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 a7 a6 a5 a4 a3 a2 a1 a0 i/o 0 21 22 23 24 25 26 27 28 29 12 13 11 8 9 5 7 6 ce i/o 7 a10 a29001bl/ a290011bl oe a11 a9 a8 a13 a14 i/o 1 i/o 2 vss i/o 3 i/o 4 i/o 5 i/o 6 4 3 2 1 32 31 30 a12 a15 a16 reset vcc we nc 14 15 16 17 18 19 20 10 nc on a290011a nc on a290011a ? tsop a29001bv/a290011bv 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 a9 a8 a13 a14 nc we vcc a16 a15 a12 a7 a6 a5 a4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 a3 a2 a1 a0 i/o 0 i/o 1 i/o 2 vss i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 ce a10 oe a11 reset nc on a290011a
a29001b/a290011b series preliminary (june, 2016, version 0.0) 3 amic technology, corp. block diagram pin descriptions pin no. description a0 - a16 address inputs i/o 0 - i/o 7 data inputs/outputs ce chip enable we write enable oe output enable reset hardware reset (n/a a290011b) vss ground vcc power supply state control command register address latch x-decoder y-decoder chip enable output enable logic cell matrix y-gating vcc detector pgm voltage generator data latch input/output buffers erase voltage generator vcc vss we ce oe a 0 -a 16 i/o 0 - i/o 7 timer stb stb reset (n/a a290011a)
a29001b/a290011b series preliminary (june, 2016, version 0.0) 4 amic technology, corp. absolute maximum ratings* ambient operating temperature ??... -55 c to +125 c storage temperature ....... ................ ...... -65 c to +150 c ground to vcc?????????.??? -2.0v to 6.5v output voltage (note 1) ???????? -2.0v to 6.5v a9, oe & reset (note 2)??????. -2.0v to 11.5v all other pins (note 1) ?????????. -2.0v to 6.5v output short circuit current (note 3) ?????. 200ma notes: 1. minimum dc voltage on in put or i/o pins is -0.5v. during voltage transitions, inputs may undershoot vss to -2.0v for periods of up to 20ns. maximum dc voltage on output and i/o pins is vcc +0.5v. during voltage transitions, outputs may overshoot to vcc +1.5v for periods up to 20ns. 2. minimum dc input voltage on a9 pins is -0.5v. during voltage transitions, a9, oe and reset may overshoot vss to -2.0v for periods of up to 20ns. maximum dc input voltage on a9 and oe is +11.5v which may overshoot to 12.5v for periods up to 20ns. ( reset is n/a on a290011b) 3. no more than one output is shorted at a time. duration of the short circuit should not be greater than one second. *comments stresses above those listed under "absolute maximum ratings" may cause permanent damage to this device. these are stress ratings only. functional operation of this device at these or any other conditions above those indicated in the oper ational sections of these specification is not implied or intended. exposure to the absolute maximum rating conditions for extended periods may affect device reliability. operating ranges commercial devices ambient temperature (t a ) ??????? 0 c to +70 c extended range devices ambient temperature (t a ) ?????? -40 c to +85 c vcc supply voltages vcc for 10% devices . . . . . . . . . . . . . . +4.5v to +5.5v operating ranges define t hose limits between which the functionally of the device is guaranteed. device bus operations this section describes the requirements and use of the device bus operations, which are initiated through the internal command register. the command register itself does not occupy any addressable memory location. the register is composed of la tches that store the commands, along with the address and data information needed to execute the command. the cont ents of the register serve as inputs to the internal state machine. the state machine outputs dictate the function of the device. the appropriate device bus operations table lists the inputs and control levels required, and the resulting output. the following subsections describe each of these operations in further detail. table 1. a29001b/a290011b device bus operations operation ce oe we reset (n/a a290011b) a0 ? a16 i/o 0 - i/o 7 read l l h h a in d out write l h l h a in d in cmos standby vcc 0.5 v x x vcc 0.5 v x high-z ttl standby h x x vcc 0.5 v x high-z output disable l h h h x high-z reset x x x l x high-z temporary sector unpr otect (note) x x x v id x x legend: l = logic low = v il , h = logic high = v ih , v id = 10.5 1.0v, x = don't care, d in = data in, d out = data out, a in = address in note: 1. see the "sector protection/unprotection" secti on and temporary sector unprotect for more information. 2. this function is not available on a290011b.
a29001b/a290011b series preliminary (june, 2016, version 0.0) 5 amic technology, corp. requirements for reading array data to read array data from the out puts, the system must drive the ce and oe pins to v il . ce is the power control and selects the device. oe is the output control and gates array data to the output pins. we should remain at v ih all the time during read operation. the internal state machine is set for reading array data upon device power-up, or after a hardware reset. this ensures that no spurious alteration of the memory content occurs during the power transition. no command is necessary in this mode to obtain array data. standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data out puts. the device remains enabled for read access until the command register contents are altered. see "reading array data" for more information. refer to the ac read operations table for timing specifications and to the read operations timings diagram for the timing waveforms, l cc1 in the dc characteri stics table represents the active current specification for reading array data. writing commands/command sequences to write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive we and ce to v il , and oe to v ih . an erase operation can erase one sector, multiple sectors, or the entire device. the sector address tables indicate the address range that each sector occupies. a "sector addr ess" consists of the address inputs required to uniquely select a sector. see the "command definitions" section for details on erasing a sector or the entire chip, or suspending/resuming the erase operation. after the system writes the autoselect command sequence, the device enters the autosel ect mode. the system can then read autoselect codes from the internal register (which is separate from the memory array) on i/o 7 - i/o 0 . standard read cycle timings apply in this mode. refer to the "autoselect mode" and "autoselect command sequence" sections fo r more information. i cc2 in the characteristics table represents the active current specification for the write mode. the "ac characteristics" section contains timing specification tables and timing diagrams for write operations. program and erase operation status during an erase or program operation, the system may check the status of the operation by reading the status bits on i/o 7 - i/o 0 . standard read cycle timings and i cc read specifications apply. refer to "write operation status" for standby mode when the system is not reading or writing to the device, it can place the device in the standby mode. in this mode, current consumption is grea tly reduced, and the outputs are placed in the high impedance state, independent of the oe input. the device enters the cmos standby mode when the ce & reset pins ( ce only on a290011b) are both held at v cc 0.5v. (note that this is a more restricted voltage range than v ih .) the device enters the ttl standby mode when ce is held at v ih , while reset (not available on a290011b) is held at vcc 0.5v. the device requires the standard access time (t ce ) before it is ready to read data. if the device is deselected du ring erasure or programming, the device draws active cu rrent until the operation is completed. i cc3 in the dc characteristics tables represents the standby current specification. output disable mode when the oe input is at v ih , output from the device is disabled. the output pins are placed in the high impedance state. reset : hardware reset pin (n/a on a290011b) the reset pin provides a hardware method of resetting the device to reading array data. when the system drives the reset pin low for at least a period of t rp , the device immediately terminates any oper ation in progress, tristates all data output pins, and ignores all read/write attempts for the duration of the reset pulse. the device also resets the internal state machine to reading array data. the operation that was interrupted should be reinitiated once the device is ready to acce pt another command sequence, to ensure data integrity. the reset pin may be tied to the system reset circuitry. a system reset would thus also reset the flash memory, enabling the system to read the boot-up firmware from the flash memory. refer to the ac characteristics tables for reset parameters and diagram. more information, and to each ac characteristics section for timing diagrams.
a29001b/a290011b series preliminary (june, 2016, version 0.0) 6 amic technology, corp. table 2. a29001b/a290011b top boot block sector address table sector a16 a15 a14 a13 a12 sector size (kbytes) address range sa0 0 0 x x x 32 00000h - 07fffh sa1 0 1 x x x 32 08000h - 0ffffh sa2 1 0 x x x 32 10000h - 17fffh sa3 1 1 0 x x 16 18000h - 1bfffh sa4 1 1 1 0 0 4 1c000h - 1cfffh sa5 1 1 1 0 1 4 1d000h - 1dfffh sa6 1 1 1 1 x 8 1e000h - 1ffffh table 3. a29001b/a290011b bottom boot block sector address table sector a16 a15 a14 a13 a12 sector size (kbytes) address range sa0 0 0 0 0 x 8 00000h - 01fffh sa1 0 0 0 1 0 4 02000h - 02fffh sa2 0 0 0 1 1 4 03000h - 03fffh sa3 0 0 1 x x 16 04000h - 07fffh sa4 0 1 x x x 32 08000h - 0ffffh sa5 1 0 x x x 32 10000h - 17fffh sa6 1 1 x x x 32 18000h - 1ffffh autoselect mode the autoselect mode provid es manufacturer and device identification, and sector prot ection verification, through identifier codes output on i/o 7 - i/o 0 . this mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. however, the autoselect codes can also be accessed in-system through the command register. when using programming equipment, the autoselect mode requires v id (9.5v to 11.5 v) on address pina9. address pins a6, a1, and ao must be as shown in autoselect codes (high voltage method) table. in addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits. refer to the corresponding sector address tables. the command definitions table shows the remaining address bits that are don't care. when all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on i/o 7 - i/o 0 .to access the autoselect codes in-system, the host system can issue the autoselect command via t he command register, as shown in the command definitions table. this method does not require v id . see "command definitions" for details on using t he autoselect mode. table 4. a29001b/a290011b autoselect codes (high voltage method) description a16 - a12 a11 - a10 a9 a8 - a7 a6 a5 - a2 a1 a0 identifier code on i/o 7 - i/o 0 manufacturer id: amic x x v id x v il x v il v il 37h device id: a29001b/ a290011b x x v id x v il x v il v ih top boot block: a1h bottom boot block: 4ch 01h (protected) sector protection verification sector address x v id x v il x v ih v il 00h (unprotected) continuation id x x v id x v il x v ih v ih 7fh note: ce =v il , oe =v il and we =v ih when autoselect mode
a29001b/a290011b series preliminary (june, 2016, version 0.0) 7 amic technology, corp. sector protection/unprotection the hardware sector protecti on feature disables both program and erase operations in any sector. the hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. sector protection/unprotection must be implemented using programming equipment. the procedure requires a high voltage (v id ) on address pin a9 and the control pins. the device is shipped with all sectors unprotected. it is possible to determine whether a sector is protected or unprotected. see "autoselect mode" for details. hardware data protection the requirement of command unlocking sequence for programming or erasing prov ides data protection against inadvertent writes (refer to the command definitions table). in addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during v cc power-up transitions, or from system noise. the device is powered up to read array data to avoid accidentally writing data to the array. write pulse "glitch" protection noise pulses of less than 5ns (typical) on oe , ce or we do not initiate a write cycle. logical inhibit write cycles are inhibited by holding any one of oe =v il , ce = v ih or we = v ih . to initiate a write cycle, ce and we must be a logical zero while oe is a logical one. power-up write inhibit if we = ce = v il and oe = v ih during power up, the device does not accept commands on the rising edge of we . the internal state machine is automatically reset to reading array data on the initial power-up. temporary sector unprotect (n/a a290011b) this feature allows temporar y unprotection of previous protected sectors to change data in-system. the sector unprotect mode is activated by setting the reset pin to v id . during this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. once v id is removed from the reset pin, all the previously protected sectors are protected again. figure 1 shows the algorithm, and the temporary sector unprotect diagram shows the timing waveforms, for this feature. start reset = v id (note 1) perform erase or program operations reset = v ih temporary sector unprotect completed (note 2) notes: 1. all protected sectors unprotected. 2. all previously protected sectors are protected once again. figure 1. temporary sector unprotect operation
a29001b/a290011b series preliminary (june, 2016, version 0.0) 8 amic technology, corp. command definitions writing specific address and data commands or sequences into the command register initiates device operations. the command definitions table defines the valid register command sequences. writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. all addresses are latched on the falling edge of we or ce , whichever happens later. all data is latched on the rising edge of we or ce , whichever happens first. refer to the appropriate timing diagrams in the "ac characteristics" section. reading array data the device is automatically set to reading array data after device power-up. no commands are required to retrieve data. the device is also ready to read array data after completing an embedded program or embedded erase algorithm. after the device accepts an erase suspend command, the device enters the erase suspend mode. the system can read array data using the standard read timings, except that if it r eads at an address within erase- suspended sectors, the devic e outputs status data. after completing a programming operation in the erase suspend mode, the system may once again read array data with the same exception. see "erase suspend/erase resume commands" for more information on this mode. the system must issue the reset command to re-enable the device for reading array data if i/o 5 goes high, or while in the autoselect mode. see the "reset command" section, next. see also "requirements for reading array data" in the "device bus operations" section for more information. the read operations table provid es the read parameters, and read operation timings diagram shows the timing diagram. reset command writing the reset command to the device resets the device to reading array data. address bits are don't care for this command. the reset command may be written between the sequence cycles in an erase command sequence before erasing begins. this resets the device to reading array data. once erasure begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in a program command sequence before programming begins. this resets the device to reading array data (also applies to programming in erase suspend mode). once programming begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in an autoselect command sequence. once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during erase suspend). if i/o 5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during erase suspend). autoselect command sequence the autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. the command definitions table shows the address and data requirements. this method is an alternative to that shown in the autoselect codes (high voltage method) table, which is intended for prom programmers and requires v id on address bit a9. the autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. the device then enters the autoselect mode, and the system may read at any addr ess any number of times, without initiating another command sequence. a read cycle at address xx00h retrieves the manufacturer code and another read cycle at xx03h retrieves the continuation code. a read cycle at address xx01h returns the device code. a read cycle containing a sector address (sa) and the address 02h in returns 01h if that sector is protected, or 00h if it is unprotected. re fer to the sector address tables for valid sector addresses. the system must write the reset command to exit the autoselect mode and return to reading array data. byte program command sequence programming is a four-bus-cyc le operation. the program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. the program address and data are written next, which in turn initiate the embedded program algorithm. the system is not required to provide further controls or timings. the device automatically provides internally generated program pulses and verify the programmed cell margin. the command definitions table shows the address and data requirements for the byte program command sequence. when the embedded program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. the system can determine the status of the program operation by using i/o 7 or i/o 6 . see "write operation status" for information on these status bits. any commands written to the device during the embedded program algorithm are ignored. programming is allowed in any sequence and across sector boundaries. a bit cannot be programmed from a "0" back to a "1 ". attempting to do so may halt the operation and set i/o 5 to "1", or cause the data polling algorithm to indicate the operation was successful. however, a succeeding read will show that the data is still "0". only erase op erations can convert a "0" to a "1".
a29001b/a290011b series preliminary (june, 2016, version 0.0) 9 amic technology, corp. chip erase command sequence chip erase is a six-bus-cycle operation. the chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the embedded erase algorithm. the device does not require the system to preprogram prior to erase. the embedded erase algorithm automatically prep rograms and verifies the entire memory for an all zero data pattern prior to electrical erase. the system is not requi red to provide any controls or timings during these operations. the command definitions table shows the address and data requirements for the chip erase command sequence. any commands written to the chip during the embedded erase algorithm are ignored. the system can determine the status of the erase operation by using i/o 7 , i/o 6 , or i/o 2 . see "write operation status" for information on these status bits. when the embedded erase algor ithm is complete, the device returns to reading array data and addresses are no longer latched. figure 3 illustrates the algorit hm for the erase operation. see the erase/program oper ations tables in "ac characteristics" for paramet ers, and to the chip/sector erase operation timings for timing waveforms. sector erase command sequence sector erase is a six-bus-cyc le operation. the sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. the command definitions table shows the address and data requirements for the sector erase command sequence. the device does not require t he system to preprogram the memory prior to erase. the embedded erase algorithm automatically programs and veri fies the sector for an all zero data pattern prior to electrical erase. the system is not required to provide any controls or timings during these operations. after the command sequence is written, a sector erase time-out of 50 s begins. during the time-out period, additional sector addresses and sector erase commands may be written. loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. the time between these additional cycles must be less than 50 s, otherwise the last address and command might not be accepted, and erasure may begin. it is re commended that processor interrupts be disabled during this time to ensure all commands are accepted. the interrupts can be re- enabled after the last sector erase command is written. if the time between additional sector erase commands can be assumed to be less than 50 s, the system need not monitor i/o 3 . any command other than sector erase or erase suspend during the time-out period resets the device to reading array data. the system must rewrite the command sequence and any additional sector addresses and commands. the system can monitor i/o 3 to determine if the sector erase timer has timed out. (see the " i/o 3 : sector erase timer" section.) the time-out begins from the rising edge of the final we pulse in the command sequence. once the sector erase operation has begun, only the erase suspend command is valid. all other commands are ignored. when the embedded erase algor ithm is complete, the device returns to reading array data and addresses are no longer latched. the system can determine t he status of the erase operation by using i/o 7 , i/o 6 , or i/o 2 . refer to "write operation status" for information on these status bits. figure 3 illustrates the algorithm for the erase operation. refer to the erase/ program operations tables in the "ac characteristics" section for parameters, and to the sector erase operations timing diagram for timing waveforms. erase suspend/erase resume commands the erase suspend command allows the system to interrupt a sector erase oper ation and then read data from, or program data to, any sector not selected for erasure. this command is valid only during the sector erase operation, including the 50 s time-out period during the sector erase command sequence. the erase suspend start write program command sequence data poll from system verify data ? last address ? programming completed no yes yes increment address embedded program algorithm in progress note : see the appropriate command definitions table for program command sequence. figure 2. program operation
a29001b/a290011b series preliminary (june, 2016, version 0.0) 10 amic technology, corp. start write erase command sequence data poll from system data = ffh ? erasure completed yes embedded erase algorithm in progress note : 1. see the appropriate command definitions table for erase command sequences. 2. see "i/o 3 : sector erase timer" for more information. no figure 3. erase operation command is ignored if written during the chip erase operation or embedded program algorithm. writing the erase suspend command during the sector erase time- out immediately terminates the time-out period and suspends the erase operation. addresses are "don't cares" when writing the erase suspend command. when the erase suspend command is written during a sector erase operation, the device requires a maximum of 20 s to suspend the erase oper ation. however, when the erase suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. after the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (the device "erase suspends" all sectors selected for erasure.) normal read and write timings and command definitions apply. reading at any address within erase-suspended sectors produces status data on i/o 7 - i/o 0 . the system can use i/o 7 , or i/o 6 and i/o 2 together, to determine if a sect or is actively erasing or is erase-suspended. see "wri te operation status" for information on these status bits. after an erase-suspended program operation is complete, the system can once again read array data within non- suspended sectors. the syst em can determine the status of the program oper ation using the i/o 7 or i/o 6 status bits, just as in the standard program operation. see "write operation status" for more information. the system may also write the autoselect command sequence when the device is in the erase suspend mode. the device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. when the device exits the autoselect mode, the device reverts to the erase suspend mode, and is ready for anot her valid operation. see "autoselect command sequence" for more information. the system must write the erase resume command (address bits are "don't care") to exit the erase suspend mode and continue the sector erase operation. further writes of the resume co mmand are ignored. another erase suspend command can be written after the device has resumed erasing.
a29001b/a290011b series preliminary (june, 2016, version 0.0) 11 amic technology, corp. table 5. a29001b/a290011b command definitions bus cycles (notes 2 - 4) first second third fourth fifth sixth command sequence (note 1) cycles addr data addr data addr data addr data addr data addr data read (notes 5, 6) 1 ra rd reset (note 6) 1 xxx f0 manufacturer id 4 555 aa 2aa 55 555 90 x00 37 top a1 device id bottom 4 555 aa 2aa 55 555 90 x01 4c continuation id 4 555 aa 2aa 55 555 90 x03 7f 00 autoselect (note 7) sector protect verify (note 8) 4 555 aa 2aa 55 555 90 sa x02 01 program 4 555 aa 2aa 55 555 a0 pa pd chip erase 6 555 aa 2aa 55 555 80 555 aa 2aa 55 555 10 sector erase 6 555 aa 2aa 55 555 80 555 aa 2aa 55 sa 30 erase suspend (note 9) 1 xxx b0 erase resume (note 10) 1 xxx 30 legend: x = don't care ra = address of the memory location to be read. rd = data read from location ra during read operation. pa = address of the memory location to be progr ammed. addresses latch on the falling edge of the we or ce pulse, whichever happens later. pd = data to be programmed at location pa. data latches on the rising edge of we or ce pulse, whichever happens first. sa = address of the sector to be verified (in autoselect mode ) or erased. address bits a16 - a12 select a unique sector. note: 1. see table 1 for description of bus operations. 2. all values are in hexadecimal. 3. except when reading array or autoselect data, all bus cycles are write operation. 4. address bits a16 - a12 are don't cares for unlock and command cycles, unless sa or pa required. 5. no unlock or command cycles required when reading array data. 6. the reset command is required to return to reading array data when device is in the autoselect mode, or if i/o 5 goes high (while the device is providing status data). 7. the fourth cycle of the autoselec t command sequence is a read cycle. 8. the data is 00h for an unprotected sect or and 01h for a protected sector. see "autoselect command sequence" for more information. 9. the system may read and program in non-erasing sectors, or enter the autoselect mode, when in the erase suspend mode. 10. the erase resume command is va lid only during the erase suspend mode. 11. the time between each command cycle has to be less than 50 s.
a29001b/a290011b series preliminary (june, 2016, version 0.0) 12 amic technology, corp. write operation status several bits, i/o 2 , i/o 3 , i/o 5 , i/o 6 , and i/o 7, are provided in the a29001b/a290011b to determine the status of a write operation. table 6 and the following subsections describe the functions of these status bits. i/o 7 , i/o 6 and i/o 2 each offer a method for determining whether a program or erase operation is complete or in progress. these three bits are discussed first. i/o 7 : data polling the data polling bit, i/o 7 , indicates to the host system whether an embedded algorithm is in progress or completed, or whether the device is in erase suspend. data polling is valid after the rising edge of the final we pulse in the program or erase command sequence. during the embedded program algorithm, the device outputs on i/o 7 the complement of the datum programmed to i/o 7 . this i/o 7 status also applies to programming during erase suspend. when the embedded program algorithm is complete, the device outputs the datum programmed to i/o 7 . the system must provide the program address to read valid status information on i/o 7 . if a program address falls within a protected sector, data polling on i/o 7 is active for approximately 2 s, then the device returns to reading array data. during the embedded erase algorithm, data polling produces a "0" on i/o 7 . when the embedded erase algorithm is complete, or if the device enters the erase suspend mode, data polling produces a "1" on i/o 7 .this is analogous to the comp lement/true datum output described for the embedded pr ogram algorithm: the erase function changes all the bits in a sector to "1"; prior to this, the device outputs the "complement," or "0." the system must provide an address within any of the sectors selected for erasure to read valid status information on i/o 7 . after an erase command sequence is written, if all sectors selected for erasing are protected, data polling on i/o 7 is active for approximately 100 s, then the device returns to reading array data. if not all selected sectors are protected, the embedded eras e algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. when the system detects i/o 7 has changed from the complement to true data, it can read valid data at i/o 7 - i/o 0 on the following read cycles. this is because i/o 7 may change asynchronously with i/o 0 - i/o 6 while output enable ( oe ) is asserted low. the data polling timings (during embedded algorithms) figure in the "ac characteristics" section illustrates this. table 6 shows the outputs for data polling on i/o 7 . figure 4 shows the data polling algorithm. start read i/o 7 -i/o 0 address = va i/o 7 = data ? fail no note : 1. va = valid address for programming. during a sector erase operation, a valid address is an address within any sector selected for erasure. during chip erase, a valid address is any non-protected sector address. 2. i/o 7 should be rechecked even if i/o 5 = "1" because i/o 7 may change simultaneously with i/o 5 . no read i/o 7 - i/o 0 address = va i/o 5 = 1? i/o 7 = data ? yes no pass yes yes figure 4. data polling algorithm
a29001b/a290011b series preliminary (june, 2016, version 0.0) 13 amic technology, corp. i/o 6 : toggle bit i toggle bit i on i/o 6 indicates whether an embedded program or erase algorithm is in progress or complete, or whether the device has entered the erase suspend mode. toggle bit i may be read at any address, and is valid after the rising edge of the final we pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. during an embedded program or erase algorithm operation, successive read cycles to any address cause i/o 6 to toggle. (the system may use either oe or ce to control the read cycles.) wh en the operation is complete, i/o 6 stops toggling. after an erase command sequence is written, if all sectors selected for erasing are protected, i/o 6 toggles for approximately 100 s, then returns to reading array data. if not all selected sectors are protected, the embedded erase algorithm erases th e unprotected sectors, and ignores the selected sector s that are protected. the system can use i/o 6 and i/o 2 together to determine whether a sector is actively erasing or is erase-suspended. when the device is actively erasing (that is, the embedded erase algorithm is in progress), i/o 6 toggles. when the device enters the erase suspend mode, i/o 6 stops toggling. however, the sy stem must also use i/o 2 to determine which sectors are erasing or erase-suspended. alternatively, the system can use i/o 7 (see the subsection on " i/o 7 : data polling"). if a program address falls within a protected sector, i/o 6 toggles for approximately 2 s after the program command sequence is written, then returns to reading array data. i/o 6 also toggles during the er ase-suspend-program mode, and stops toggling once the embedded program algorithm is complete. the write operation status table shows the outputs for toggle bit i on i/o 6 . refer to figure 5 for the toggle bit algorithm, and to the toggle bit timings figure in the "ac characteristics" section for the timing diagram. the i/o 2 vs. i/o 6 figure shows the differences between i/o 2 and i/o 6 in graphical form. see also the subsection on " i/o 2 : toggle bit ii". i/o 2 : toggle bit ii the "toggle bit ii" on i/o 2 , when used with i/o 6 , indicates whether a particular sector is actively erasing (that is, the embedded erase algorithm is in progress), or whether that sector is erase-suspended. toggle bit ii is valid after the rising edge of the final we pulse in the command sequence. i/o 2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (the system may use either oe or ce to control the read cycles.) but i/o 2 cannot distinguish wh ether the sector is actively erasing or is erase-suspended. i/o 6 , by comparison, indicates whether the device is actively erasing, or is in erase suspend, but cannot distinguish which sectors are selected fo r erasure. thus, both status bits are required for sector and mode information. refer to table 6 to compare outputs for i/o 2 and i/o 6 . figure 5 shows the toggle bit algorithm in flowchart form, and the section " i/o 2 : toggle bit ii" explains the algorithm. see also the " i/o 6 : toggle bit i" subsection. refer to the toggle bit timings figure for the toggle bit timing diagram. the i/o 2 vs. i/o 6 figure shows the differences between i/o 2 and i/o 6 in graphical form. reading toggle bits i/o 6 , i/o 2 refer to figure 5 for the following discussion. whenever the system initially begins read ing toggle bit status, it must read i/o 7 - i/o 0 at least twice in a row to determine whether a toggle bit is toggling. typically, a system would note and store the value of t he toggle bit after the first read. after the second read, the system would compare the new value of the toggle bit with the first. if the toggle bit is not toggling, the device has comp leted the program or erase operation. the system can read array data on i/o 7 - i/o 0 on the following read cycle. however, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of i/o 5 is high (see the section on i/o 5 ). if it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as i/o 5 went high. if the toggle bit is no longer togglin g, the device has successfully completed the program or eras e operation. if it is still toggling, the device did no t complete the operation successfully, and the system must write the reset command to return to reading array data. the remaining scenario is that the system initially determines that the toggle bit is toggling and i/o 5 has not gone high. the system may continue to monitor the toggle bit and i/o 5 through successive read cycles, determining the status as described in the previous paragraph. alternatively, it may choose to perform other system tasks. in this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of figure 5). i/o 5 : exceeded timing limits i/o 5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. under these conditions i/o 5 produces a "1." this is a failure condition that indicates the pr ogram or erase cycle was not successfully completed. the i/o 5 failure condition may appear if the system tries to program a "1 "to a location that is previously programmed to "0." only an erase operation can change a "0" back to a "1." under this condition, the device halts the operation, and when the operation has exceeded the timing limits, i/o 5 produces a "1." under both these conditions, the system must issue the reset command to re turn the device to reading array data. i/o 3 : sector erase timer after writing a sector erase command sequence, the system may read i/o 3 to determine whether or not an erase operation has begun. (t he sector erase timer does not apply to the chip erase command.) if additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. when the time-out is complete, i/o 3 switches from "0" to "1." the system may ignore i/o 3 if the system can guarantee that the time between additional sector erase commands will always be less than 50 s. see also the "sector erase command sequence" section. after the sector erase command sequence is written, the system should read the status on i/o 7 ( data polling) or i/o 6 (toggle bit 1) to ensure the device has accepted the command sequence,
a29001b/a290011b series preliminary (june, 2016, version 0.0) 14 amic technology, corp. start read i/o 7 -i/o 0 toggle bit = toggle ? program/erase operation not commplete, write reset command yes notes : 1. read toggle bit twice to determine whether or not it is toggling. see text. 2. recheck toggle bit because it may stop toggling as i/o 5 changes to "1". see text. no read i/o 7 - i/o 0 twice i/o 5 = 1? toggle bit = toggle ? yes yes program/erase operation complete no no read i/o 7 -i/o 0 (notes 1,2) figure 5. toggle bit algorithm (note 1) and then read i/o 3 . if i/o 3 is "1", the internally controlled erase cycle has begun; all fu rther commands (other than erase suspend) are ignored until the erase operation is complete. if i/o 3 is "0", the device will accept additional sector erase commands. to ensure the command has been accepted, the system software should check the status of i/o 3 prior to and following each subsequent sector erase command. if i/o 3 is high on the second status check, the last command mi ght not have been accepted. table 6 shows the outputs for i/o 3 .
a29001b/a290011b series preliminary (june, 2016, version 0.0) 15 amic technology, corp. table 6. write operation status i/o 7 i/o 6 i/o 5 i/o 3 i/o 2 operation (note 1) (note 2) (note 1) embedded program algorithm 7 i/o toggle 0 n/a no toggle standard mode embedded erase algorithm 0 toggle 0 1 toggle reading within erase suspended sector 1 no toggle 0 n/a toggle reading within non-erase suspend sector data data data data data erase suspend mode erase-suspend-program 7 i/o toggle 0 n/a n/a notes: 1. i/o 7 and i/o 2 require a valid address when reading status informati on. refer to the appropriate subsection for further details. 2. i/o 5 switches to ?1? when an embedded program or embedded erase operation has exceeded the maximum timing limits. see ?i/o5: exceeded timing limits? for more information. maximum negative input overshoot 20ns 20ns 20ns +0.8v -0.5v -2.0v maximum positive input overshoot 20ns 20ns 20ns vcc+0.5v 2.0v vcc+2.0v
a29001b/a290011b series preliminary (june, 2016, version 0.0) 16 amic technology, corp. dc characteristics ttl/nmos compatible parameter symbol parameter description test description min. typ. max. unit i li input leakage current v in = vss to vcc. vcc = vcc max 2.0 a i lit a9, oe & reset input load current vcc = vcc max, a9, oe & reset =12.5v 100 a i lo output leakage current v out = vss to vcc. vcc = vcc max 2.0 a i cc1 vcc active read current (notes 1, 2) ce = v il , oe = v ih 20 30 ma i cc2 vcc active write (program/erase) current (notes 2, 3, 4) ce = v il , oe =v ih 30 40 ma i cc3 vcc standby current (note 2) ce = v ih , reset = vcc 0.5v 0.4 1.0 ma v il input low level -0.5 0.8 v v ih input high level 3.3 vcc+0.5 v v id voltage for autoselect and temporary unprotect sector vcc = 5.25 v 9.5 11.5 v v ol output low voltage i ol = 12ma, vcc = vcc min 0.45 v v oh output high voltage i oh = -2.5 ma, vcc = vcc min 2.4 v cmos compatible parameter symbol parameter description test description min. typ. max. unit i li input leakage current v in = vss to vcc, vcc = vcc max 2.0 a i lit a9, oe & reset input load current vcc = vcc max, a9, oe & reset = 12.5v 100 a i lo output leakage current v out = vss to vcc, vcc = vcc max 2.0 a i cc1 vcc active read current (notes 1,2) ce = v il , oe = v ih 20 30 ma i cc2 vcc active program/erase current (notes 2,3,4) ce = v il , oe = v ih 30 40 ma i cc3 vcc standby current (notes 2, 5) ce = reset = vcc 0.5 v 6 150 a v il input low level -0.5 0.8 v v ih input high level 0.7 x vcc vcc+0.3 v v id voltage for autoselect and temporary sector unprotect vcc = 5.25 v 9.5 11.5 v v ol output low voltage i ol = 12.0 ma, vcc = vcc min 0.45 v v oh1 i oh = -2.5 ma, vcc = vcc min 0.85 x vcc v v oh2 output high voltage i oh = -100 a. vcc = vcc min vcc-0.4 v notes for dc characteristics (both tables): 1. the i cc current listed includes both the dc operation current and the frequency dependent component (at 6 mhz). the frequency component typically is less than 2 ma/mhz, with oe at v ih . 2. maximum i cc specifications are tested with vcc = vcc max. 3. i cc active while embedded algorithm (program or erase) is in progress. 4. not 100% tested. 5. for cmos mode only, i cc3 = 200 a max at extended temperatures (> +85 c). 6. reset is not available on a290011b.
a29001b/a290011b series preliminary (june, 2016, version 0.0) 17 amic technology, corp. ac characteristics read only operations parameter symbols speed jedec std description test setup -55 unit t avav t rc read cycle time (note 2) min. 55 ns t avqv t acc address to output delay ce = v il oe = v il max. 55 ns t elqv t ce chip enable to output delay oe = v il max. 55 ns t glqv t oe output enable to out put delay max. 30 ns read min. 0 ns t oeh output enable hold time (note 2) toggle and data polling min. 10 ns t ehqz t df chip disable to output high z (notes 1,2) max. 18 ns t ghqz t df output disable to output high z (notes 1,2) 18 ns t axqx t oh output hold time from addresses, ce or oe , whichever occurs first min. 0 ns notes: 1. output driver disable time. 2. not 100% tested. timing waveforms for read only operation ( reset =v ih on a29001b) addresses addresses stable ce oe we output valid high-z output t rc t oeh t oe t ce high-z t oh t df t acc 0v
a29001b/a290011b series preliminary (june, 2016, version 0.0) 18 amic technology, corp. ce, oe reset t rh t rp t ready reset timings not during embedded algorithms reset t rp ~ ~ reset timings during embedded algorithms program or erase command sequence reset ~ ~ ~ ~ ~ ~ 12v 0 or 5v t vidr t vidr 0 or 5v t rsp ce we hardware reset ( reset ) (n/a on a290011b) parameter jedec std description test setup all speed options unit t ready reset pin low (during embedded algorithms) to read or write (see note) max 20 s t ready reset pin low (not during embedded algorithms) to read or write (see note) max 500 ns t rp reset pulse width min 500 ns t rh reset high time before read (see note) min 50 ns note: not 100% tested. reset timings temporary sector unprotect (n/a on a290011b) parameter jedec std description all speed options unit t vidr v id rise and fall time (see note) min 500 ns t rsp reset setup time for temporary sector unprotect min 4 s note: not 100% tested. temporary sector unprotect timing diagram
a29001b/a290011b series preliminary (june, 2016, version 0.0) 19 amic technology, corp. ac characteristics erase and program operations parameter symbols speed jedec std description -55 unit t avav t wc write cycle time (note 1) min. 55 ns t avwl t as address setup time min. 0 ns t wlax t ah address hold time min. 40 ns t dvwh t ds data setup time min. 25 ns t whdx t dh data hold time min. 0 ns t oes output enable setup time min. 0 ns t ghwl t ghwl read recover time before write ( oe high to we low) min. 0 ns t elwl t cs ce setup time min. 0 ns t wheh t ch ce hold time min. 0 ns t wlwh t wp write pulse width min. 30 ns min. 20 ns t whwl t wph write pulse width high max. 50 s t whwh1 t whwh1 byte programming operation (note 2) typ. 6 s t whwh2 t whwh2 sector erase operation (note 2) typ. 0.3 sec t vcs vcc set up time (note 1) min. 50 s notes: 1. not 100% tested. 2. see the "erase and programming perfo rmance" section for more information.
a29001b/a290011b series preliminary (june, 2016, version 0.0) 20 amic technology, corp. timing waveforms for program operation addresses ce oe we data vcc a0h pd t wc pa program command sequence (last two cycles) pa d out ~ ~ ~ ~ pa ~ ~ status ~ ~ ~ ~ ~ ~ ~ ~ t as t vcs read status data (last two cycles) 555h t ah t whwh1 t ch t ghwl t wp t wph t cs t ds t dh note : pa = program addrss, pd = program data, dout is the true data at the program address.
a29001b/a290011b series preliminary (june, 2016, version 0.0) 21 amic technology, corp. addresses ce oe we data vcc 55h 30h t wc sa erase command sequence (last two cycles) va complete ~ ~ ~ ~ va ~ ~ in progress ~ ~ ~ ~ ~ ~ ~ ~ t as t vcs read status data 2aah t ah t whwh2 t ch t ghwl t wp t wph t cs t ds t dh note : sa = sector address. va = valid address for reading status data. 555h for chip erase 10h for chip erase timing waveforms for chip/sector erase operation
a29001b/a290011b series preliminary (june, 2016, version 0.0) 22 amic technology, corp. timing waveforms for data polling (during embedded algorithms) addresses ce oe we i/o 7 t rc va va va ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ complement ~ ~ complement true valid data high-z status data ~ ~ status data true valid data high-z i/o 0 - i/o 6 t acc t ce t ch t oe t oeh t df t oh note : va = valid address. illustation shows first status cycle after command sequence, last status read cycle, and array data read cycle.
a29001b/a290011b series preliminary (june, 2016, version 0.0) 23 amic technology, corp. timing waveforms for toggle bit (during embedded algorithms) note: va = valid address; not required for i/o 6 . illustration shows first two status cycl e after command sequence, last status read cycle, and array data read cycle. addresses ce oe we i/o 6 , i/o 2 t rc va va va ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ valid status t acc t ce t ch t oe t oeh t df t oh va valid status valid status valid status ~ ~ (first read) (second read) (stop togging)
a29001b/a290011b series preliminary (june, 2016, version 0.0) 24 amic technology, corp. timing waveforms for i/o 2 vs. i/o 6 ac characteristics erase and program operations alternate ce controlled writes parameter symbols speed jedec std description -55 unit t avav t wc write cycle time (note 1) min. 55 ns t avel t as address setup time min. 0 ns t elax t ah address hold time min. 40 ns t dveh t ds data setup time min. 25 ns t ehdx t dh data hold time min. 0 ns t ghel t ghel read recover time before write min. 0 ns t wlel t ws we setup time min. 0 ns t ehwh t wh we hold time min. 0 ns t eleh t cp write pulse width min. 30 ns t ehel t cph write pulse width high min. 20 ns t whwh1 t whwh1 byte programming operation (note 2) typ. 6 s t whwh2 t whwh2 sector erase operation (note 2) typ. 0.3 sec notes: 1. not 100% tested. 2. see the "erase and programming perfo rmance" section for more information. enter embedded erasing erase suspend enter erase suspend program erase resume we i/o 6 i/o 2 erase erase suspend read erase suspend read erase erase complete i/o 2 and i/o 6 toggle with oe and ce note : both i/o 6 and i/o 2 toggle with oe or ce. see the text on i/o 6 and i/o 2 in the section "write operation statue" for more information. ~ ~ ~ ~ ~ ~ erase suspend program ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~
a29001b/a290011b series preliminary (june, 2016, version 0.0) 25 amic technology, corp. timing waveforms for alternate ce controlled write operation erase and programming performance parameter typ. (note 1) max. (note 2) unit comments sector erase time 0.3 1.5 sec chip erase time 1 4 sec excludes 00h programming prior to erasure (note 4) byte programming time 6 100 s chip programming time (note 3) 1 4 sec excludes system-level overhead (note 5) notes: 1. typical program and erase times assume the following conditions: 25 c, 5.0v vcc, 10,000 cycles. additionally, programming typically assumes checkerboard pattern. 2. under worst case conditions of 90 c, vcc = 4.5v (4.75v for -55), 100,000 cycles. 3. the typical chip programming time is considerably less t han the maximum chip programming time listed, since most bytes program faster than the maximum byte program time listed. if the maximum byte program time given is exceeded, only then does the device set i/o 5 = 1. see the section on i/o 5 for further information. 4. in the pre-programming step of the embedded erase algorithm, all bytes are programmed to 00h before erasure. 5. system-level overhead is the time required to execute the four-bus-cycle command sequence for programming. see table 5 for further information on command definitions. 6. the device has a guaranteed minimum erase an d program cycle endurance of 100,000 cycles. addresses we oe ce data 555 for program 2aa for erase pa d out ~ ~ ~ ~ i/o 7 ~ ~ ~ ~ ~ ~ data polling note : 1. pa = program address, pd = program data, sa = sector address, i/o 7 = complement of data input, d out = array data. 2. figure indicates the last two bus cycles of the command sequence. pd for program 30 for sector erase 10 for chip erase ~ ~ t busy t whwh1 or 2 t ah t as t wc t wh t ghel t cp t ws t cph pa for program sa for sector erase 555 for chip erase a0 for program 55 for erase t rh t ds t dh
a29001b/a290011b series preliminary (june, 2016, version 0.0) 26 amic technology, corp. latch-up characteristics description min. max. input voltage with respect to vss on all i/o pins -1.0v vcc+1.0v vcc current -100 ma +100 ma input voltage with respect to vss on all pins except i/o pins (including a9, oe and reset ) -1.0v 12.5v includes all pins except vcc. test conditions: vcc = 5.0v, one pin at time. reset n/a on a290011b. tsop pin capacitance parameter symbol parameter descrip tion test setup typ. max. unit c in input capacitance v in =0 6 7.5 pf c out output capacitance v out =0 8.5 12 pf c in2 control pin capacitance v in =0 7.5 9 pf notes: 1. sampled, not 100% tested. 2. test conditions t a = 25 c, f = 1.0mhz plcc and p-dip pin capacitance parameter symbol parameter descrip tion test setup typ. max. unit c in input capacitance v in =0 4 6 pf c out output capacitance v out =0 8 12 pf c in2 control pin capacitance v pp =0 8 12 pf notes: 1. sampled, not 100% tested. 2. test conditions t a = 25 c, f = 1.0mhz
a29001b/a290011b series preliminary (june, 2016, version 0.0) 27 amic technology, corp. test conditions test specifications test condition -55 unit output load 1 ttl gate output load capacitance, c l (including jig capacitance) 30 pf input rise and fall times 5 ns input pulse levels 0.0 - 3.0 v input timing measurement reference levels 1.5 v output timing measurement reference levels 1.5 v test setup 6.2 k device under test c l diodes = in3064 or equivalent 2.7 k 5.0 v
a29001b/a290011b series preliminary (june, 2016, version 0.0) 28 amic technology, corp. part numbering scheme a29 x package type blank = 32-pin dip l = 32-pin plcc v = 32-pin tsop device version* b = b chip version device type a29 = amic 5v single bank parallel nor flash device density 001 = 1mbits 0011 = 1mbits 002 = 2mbits 0021 = 2mbits temperature* x package material f = pb free x * optional x xxx(x) / x packing q = tape & reel x t = top boot u = bottom boot xx speed grade c 85 ~ c 40 - u + = c 70 ~ c 0 blank + =
a29001b/a290011b series preliminary (june, 2016, version 0.0) 29 amic technology, corp. ordering information top boot sector flash part no. access time (ns) active read current typ. (ma) program/erase current typ. (ma) standby current typ. ( a ) package a29001bt-55f a290011bt-55f a29001bt-55uf a290011bt-55uf 32pin pb-free dip a29001btl-55f a290011btl-55f a29001btl-55uf a290011btl-55uf 32pin pb-free plcc a29001btv-55f a290011btv-55f a29001btv-55uf a290011btv-55uf 55 20 30 1 32pin pb-free tsop note: -u is for industrial operating temperature range: -40 c to +85 c. bottom boot sector flash part no. access time (ns) active read current typ. (ma) program/erase current typ. (ma) standby current typ. ( a ) package a29001bu-55f a290011bu-55f A29001BU-55UF a290011bu-55uf 32pin pb-free dip a29001bul-55f a290011bul-55f a29001bul-55uf a290011bul-55uf 32pin pb-free plcc a29001buv-55f a290011buv-55f a29001buv-55uf a290011buv-55uf 55 20 30 1 32pin pb-free tsop note: -u is for industrial operating temperature range: -40 c to +85 c.
a29001b/a290011b series preliminary (june, 2016, version 0.0) 30 amic technology, corp. package information p-dip 32l outline dimensions unit: inches/mm 1 32 e a 2 a l e 1 e a d c b 1 b a 1 base plane seating plane 16 17 e dimensions in inches dimensions in mm symbol min nom max min nom max a - - 0.210 - - 5.334 a 1 0.015 - - 0.381 - - a 2 0.149 0.154 0.159 3.785 3.912 4.039 b - 0.018 - - 0.457 - b 1 - 0.050 - - 1.270 - c - 0.010 - - 0.254 - d 1.645 1.650 1.655 41.783 41.91 42.037 e 0.537 0.542 0.547 13.64 13.767 13.894 e 1 0.590 0.600 0.610 14.986 15.240 15.494 e a 0.630 0.650 0.670 16.002 16.510 17.018 e - 0.100 - - 2.540 - l 0.120 0.130 0.140 3.048 3.302 3.556 0 - 15 0 - 15 notes: 1. the maximum value of dimension d includes end flash. 2. dimension e does not include resin fins.
a29001b/a290011b series preliminary (june, 2016, version 0.0) 31 amic technology, corp. package information plcc 32l outline dimension unit: inches/mm a 1 a 2 a e d y h d d 13 g d b 1 b g e c 5 14 20 21 29 30 32 1 4 e h e l dimensions in inches dimensions in mm symbol min nom max min nom max a - - 0.134 - - 3.40 a 1 0.0185 - - 0.47 - - a 2 0.105 0.110 0.115 2.67 2.80 2.93 b 1 0.026 0.028 0.032 0.66 0.71 0.81 b 0.016 0.018 0.021 0.41 0.46 0.54 c 0.008 0.010 0.014 0.20 0.254 0.35 d 0.547 0.550 0.553 13.89 13.97 14.05 e 0.447 0.450 0.453 11.35 11.43 11.51 e 0.044 0.050 0.056 1.12 1.27 1.42 g d 0.490 0.510 0.530 12.45 12.95 13.46 g e 0.390 0.410 0.430 9.91 10.41 10.92 h d 0.585 0.590 0.595 14.86 14.99 15.11 h e 0.485 0.490 0.495 12.32 12.45 12.57 l 0.075 0.090 0.095 1.91 2.29 2.41 y - - 0.003 - - 0.075 0 - 10 0 - 10 notes: 1. dimensions d and e do not include resin fins. 2. dimensions g d & g e are for pc board surface mount pad pitch design reference only.
a29001b/a290011b series preliminary (june, 2016, version 0.0) 32 amic technology, corp. package information tsop 32l type i (8 x 20mm) outline dimensions unit: inches/mm e l e l a a 2 c d y detail "a" s a 1 b h d d e detail "a" dimensions in inches dimensions in mm symbol min nom max min nom max a - - 0.047 - - 1.20 a 1 0.002 - 0.006 0.05 - 0.15 a 2 0.037 0.039 0.041 0.95 1.00 1.05 b 0.007 0.009 0.011 0.18 0.22 0.27 c 0.004 - 0.008 0.11 - 0.20 d 0.720 0.724 0.728 18.30 18.40 18.50 e - 0.315 0.319 - 8.00 8.10 e 0.020 bsc 0.50 bsc h d 0.779 0.787 0.795 19.80 20.00 20.20 l 0.016 0.020 0.024 0.40 0.50 0.60 l e - 0.032 - - 0.80 - s - - 0.020 - - 0.50 y - - 0.003 - - 0.08 0 - 5 0 - 5 notes: 1. the maximum value of dimension d includes end flash. 2. dimension e does not include resin fins. 3. dimension s includes end flash.

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